Part Number Hot Search : 
TS7515IP 81XS43D5 SP846 55M45 BNR14R21 2151K 00ETTS GS9065A
Product Description
Full Text Search
 

To Download SLD131UL Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SLD131UL
GaAlAs Laser Diode
Description The SLD131UL is a low-power consumption and low-noise laser diode developed for portable CDs. Features * Low current consumption IOP: 20mA (PO = 2.5mW) * Supports single power supply. * Low noise Applications * Portable CDs Structure * GaAlAs double hetero laser diode * PIN photodiode to monitor laser beam output Absolute Maximum Ratings (Tc = 25C) * Optical power output PO 4 mW * Reverse voltage VR LD 2 V PD 15 V * Operating temperature Topr -10 to +60 C * Storage temperature Tstg -40 to +85 C M-259
Connection Diagram
3 COMMON
Pin Configuration
PD 2 1
LD
2
1
3 1. LD anode 2. PD anode 3. COMMON Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E94615-PK
SLD131UL
Electrical and Optical Characteristics (TC = 25C) Item Threshold current Operating current Operating voltage Wavelength Monitor current Perpendicular Rediation angle Positional accuracy Parallel Asymmetry Position Angle Ith Iop Vop p Im // SR X, Y, Z D AS ID CT Po = 2.5mW Po = 2.5mW | Z // -Z | VR = 5V VR = 5V, f = 1kHz 0.2 0.6 Po = 2.5mW Po = 2.5mW Po = 2.5mW Po = 2.5mW Po = 2.5mW VR = 5V 1.7 760 0.08 20 8 Symbol Conditions Min. Typ. 16 20 1.9 790 0.11 39 13
TC : Case temperature Max. 28 30 2.5 810 0.6 45 25 25 150 4 0.9 15 150 30 Unit mA mA V nm mA degree degree % m degree mW/mA m nA pF
Differential efficiency Astigmatism Dark current of PD capacitance of PD
Power
SR = SL SR
SL - SR SL + SR
-7 0
7
//
-2-
SLD131UL
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
5.0 Tc = 10C 4.5 Tc = 10C 60C 20C 30C 40C 50C 60C Po = 2.5mW, Tc = 25C
Far field pattern (FFP)
PO - Optical power output [mV]
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 0 5 10 15 20 25
Relative radiant intensity
//
30 0.3
35 IF [mA] Imon [mA]
-40
-30
-20
-10
0 Angle [ ]
10
20
30
40
0.1 0.2 IF - Forward current [mA]
Threshold current vs. Temperature characteristics
100 80
Differential efficiency vs. Temperature characteristics
1.0 Po = 2.5mW
D - Differential efficiency [mW/mA]
20 40 60 80
Ith - Threshold current [mA]
60
0.8
40
0.6
0.4
20
0.2
10 -20
0
0.0 -20
0
20
40
60
80
Tc - Case temperature [C]
Tc - Case temperature [C]
PIN diode voltage and current characteristics
0.25 Po = 2.5mW, Tc = 25C
Monitor current vs. Temperature characteristics
1.0 0.8 0.6 Po = 2.5mW
Im - Monitor current [mA]
Current [mA]
0.4
0
0.2
-0.25 -1.0
0.0 Voltage [V]
1.0
0.1 -20
0
20
40
60
80
Tc - Case temperature [C]
-3-
SLD131UL
Power dependence of far field pattern (Parallel to junction)
Tc = 25C
Power dependence of far field pattern (Perpendicular to junction)
Tc = 25C
Relative radiant intensity
Relative radiant intensity
Po = 4mW
Po = 4mW
Po = 2.5mW
Po = 2.5mW Po = 1mW Po = 1mW
-40
-30
-20
-10
0 Angle [ ]
10
20
30
40
0 -40
-30
-20
-10
0 Angle [ ]
10
20
30
40
Temperature dependence of far field pattern (Parallel to junction)
Po = 2.5mW
Temperature dependence of far field pattern (Perpendicular to junction)
Po = 2.5mW
Tc = 60C
Relative radiant intensity
Relative radiant intensity
Tc = 50C Tc = 40C
Tc = 60C Tc = 50C Tc = 40C Tc = 30C Tc = 20C Tc = 10C -40 -30 -20 -10 0 Angle [ ] 10 20 30 40
Tc = 30C Tc = 20C Tc = 10C -40 -30 -20 -10 0 Angle [ ] 10 20 30 40
-4-
SLD131UL
Power dependence of oscillating spectrum
Tc = 25C
Po = 1mW
Relative radiant intensity
Po = 2.5mW
Po = 4mW
780
785
790 - Wavelength [nm]
795
800
-5-
SLD131UL
Temperature dependence of oscillating spectrum
PO = 2.5mW Tc = 60C
Relative radiant intensity
Tc = 40C
Tc = 20C
785
790
795 - Wavelength [nm]
800
805
-6-
SLD131UL
Package Outline
Unit: mm
M-259
Reference Slot 1.0 0.5 3
90
2
1
Window Glass 0.8
0 5.6 - 0.05 4.4 MAX 3.8 MAX 0.6 0.5 MIN
0.4
0.2 5
30
1.26
2 3 1 3 - 0.45 PCD 2.0
Reference Plane
LD Chip & Photo Diode
Optical Distance = 1.35 0.15
SONY CODE EIAJ CODE JEDEC CODE
M-259
6.5
1.2 0.1 3.1 MAX
PACKAGE WEIGHT
0.3g
-7-


▲Up To Search▲   

 
Price & Availability of SLD131UL

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X